2N3019
2N3020
NPN SILICON TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3019, 2N3020
types are NPN silicon transistors designed for general
purpose amplifier applications.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N3019
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=90V
10
ICBO
VCB=90V, TA=150°C
10
IEBO
VEB=5.0V
10
BVCBO
IC=100μA
140
BVCEO
IC=30mA
80
BVEBO
IE=100μA
7.0
VCE(SAT) IC=150mA, IB=15mA
0.2
VCE(SAT) IC=500mA, IB=50mA
0.5
VBE(SAT) IC=150mA, IB=15mA
1.1
hFE
VCE=10V, IC=100μA
50
hFE
VCE=10V, IC=10mA
90
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=150mA, TA=-55°C
40
hFE
VCE=10V, IC=500mA
50
hFE
VCE=10V, IC=1.0A
15
fT
VCE=10V, IC=50mA, f=20MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
12
Cib
VEB=0.5V, IC=0, f=1.0MHz
60
rb’Cc
VCB=10V, IC=10mA, f=4.0MHz
400
NF
VCE=10V, IC=100μA, f=1.0kHz,
RS=1.0kΩ
4.0
UNITS
V
V
V
A
W
W
°C
140
80
7.0
1.0
0.8
5.0
-65 to +200
2N3020
MIN
MAX
10
10
10
140
80
7.0
0.2
0.5
1.1
30
200
40
200
40
200
30
15
100
-
120
12
60
400
-
-
UNITS
nA
μA
nA
V
V
V
V
V
V
MHz
pF
pF
ps
dB
R3 (22-July 2021)
2N3019
2N3020
NPN SILICON TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R3 (22-July 2021)
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• Custom product and package development
• Up-screening capabilities
REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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Hauppauge, NY 11788 USA
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which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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