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2N3019 PBFREE

2N3019 PBFREE

  • 厂商:

    CENTRAL(中环)

  • 封装:

    TO205AD

  • 描述:

    TRANS NPN 80V 1A

  • 详情介绍
  • 数据手册
  • 价格&库存
2N3019 PBFREE 数据手册
2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N3019 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=90V 10 ICBO VCB=90V, TA=150°C 10 IEBO VEB=5.0V 10 BVCBO IC=100μA 140 BVCEO IC=30mA 80 BVEBO IE=100μA 7.0 VCE(SAT) IC=150mA, IB=15mA 0.2 VCE(SAT) IC=500mA, IB=50mA 0.5 VBE(SAT) IC=150mA, IB=15mA 1.1 hFE VCE=10V, IC=100μA 50 hFE VCE=10V, IC=10mA 90 hFE VCE=10V, IC=150mA 100 300 hFE VCE=10V, IC=150mA, TA=-55°C 40 hFE VCE=10V, IC=500mA 50 hFE VCE=10V, IC=1.0A 15 fT VCE=10V, IC=50mA, f=20MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 12 Cib VEB=0.5V, IC=0, f=1.0MHz 60 rb’Cc VCB=10V, IC=10mA, f=4.0MHz 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ 4.0 UNITS V V V A W W °C 140 80 7.0 1.0 0.8 5.0 -65 to +200 2N3020 MIN MAX 10 10 10 140 80 7.0 0.2 0.5 1.1 30 200 40 200 40 200 30 15 100 - 120 12 60 400 - - UNITS nA μA nA V V V V V V MHz pF pF ps dB R3 (22-July 2021) 2N3019 2N3020 NPN SILICON TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R3 (22-July 2021) w w w. c e n t r a l s e m i . c o m OUTSTANDING SUPPORT AND SUPERIOR SERVICES PRODUCT SUPPORT Central’s operations team provides the highest level of support to insure product is delivered on-time. • Supply management (Customer portals) • Custom bar coding for shipments • Inventory bonding • Custom product packing • Consolidated shipping options DESIGNER SUPPORT/SERVICES Central’s applications engineering team is ready to discuss your design challenges. Just ask. • Free quick ship samples (2nd day air) • Special wafer diffusions • Online technical data and parametric search • PbSn plating options • SPICE models • Package details • Custom electrical curves • Application notes • Environmental regulation compliance • Application and design sample kits • Customer specific screening • Custom product and package development • Up-screening capabilities REQUESTING PRODUCT PLATING 1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when ordering (example: 2N2222A TIN/LEAD). 2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number when ordering (example: 2N2222A PBFREE). CONTACT US Corporate Headquarters & Customer Support Team Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Main Tel: (631) 435-1110 Main Fax: (631) 435-1824 Support Team Fax: (631) 435-3388 www.centralsemi.com Worldwide Field Representatives: www.centralsemi.com/wwreps Worldwide Distributors: www.centralsemi.com/wwdistributors For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER, which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms w w w. c e n t r a l s e m i . c o m (001)
2N3019 PBFREE
物料型号: - 2N3019 - 2N3020

器件简介: - 这些晶体管是NPN硅类型,用于通用放大器应用。

引脚分配: - Emitter: 引脚1 - Base: 引脚2 - Collector: 引脚3

参数特性: - 最大集电极-基极电压(VCBO): 140V - 最大集电极-发射极电压(VCEO): 80V - 发射极-基极电压(VEBO): 7.0V - 连续集电极电流(IC): 1.0A - 功耗(PD): 0.8W(25°C时)/ 5.0W(结温25°C时) - 工作和存储结温度(TJ.Tstg): -65至+200°C

功能详解: - 包括电流增益(hFE)、截止频率(fT)、电容(Cob, Cib)、基极电阻(rb')等电气特性。

应用信息: - 提供了产品支持、设计服务和特殊产品镀层请求信息。

封装信息: - TO-39封装,包括机械轮廓尺寸和标记。
2N3019 PBFREE 价格&库存

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